unisonic technologies co., ltd MGBR40V60C prelimin ary diode www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r601-181.a dual mos g a ted barrier rectifier ? descripti on t he u t c mgbr40v 60 c is a du al mos ga ted barr i er rect ifiers, it uses ut c?s a d vanc ed tech nolo g y to pr o v ide cust omer s w i t h lo w for w a r d volt ag e drop a nd hi g h s w itc h in g sp eed, etc. ? features * ver y l o w for w ard volta ge dro p * high s w itc h in g spee d ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 MGBR40V60Cl-ta3-t MGBR40V60Cg-ta3-t to-220 a k a tube note: pin ass i gnme n t: a: anode, k: catho d e http://
MGBR40V60C preliminar y diode unisonic technologi es co., ltd 2 of 3 w w w . uniso nic.co m.t w q w - r 6 0 1 - 1 8 1 . a ? absolute maxi mu m ra ting s ( p er l e g) (t a = 25c unles s other w i s e sp ecified) singl e ph ase, half w a v e , 60h z, resistive or inductiv e loa d . f o r capacita n c e loa d , derate current b y 20 % . paramet er symbol r at ings unit dc blocki ng v o ltag e v rm 60 v w o rking pe ak reverse v o lta g e v rw m 60 v peak re petitiv e revers e volt age v rrm 60 v average rectified output current per device per leg i o 20 a to t a l 4 0 a non-r e p e titive peak f o r w ard surge c u rrent 8.3ms sing le half sin e -w ave super impos e d on rate d lo ad i fsm 280 a operatin g junc tion t e mperatu r e t j -65~ + 150 c storage t e mperature t st g -65~ + 150 c note: absolute maximum ratings are those values beyond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? th er mal char ac teri stic s (p er le g ) paramet er symbol r at ings unit junction to ambient ja 62.5 c/w junction to case jc 2 c/w ? electric al ch ara cteri s tic s ( p er leg) (t a =2 5 c unless other w i se specified.) parameter symbol test conditions min typ max unit reverse breakdown voltage (note 1) v ( br ) r i r = 0 .50ma 60 v f o r w a r d volt ag e drop v fm i f = 20a, t j = 25c 0.60 v i f = 20a, t j = 125c 0.55 v leakage current (note 1) i rm v r = 60v, t j = 25c 500 a v r = 60v, t j = 125c 100 ma notes: 1. short duratio n puls e test used to minimize se lf-he a t ing effect. 2. thermal resistance junction to case mounted on heatsink.
MGBR40V60C preliminar y diode unisonic technologi es co., ltd 3 of 3 w w w . uniso nic.co m.t w q w - r 6 0 1 - 1 8 1 . a ut c a s s u m e s n o r e s p o n s i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r o d u cts a t v a lu e s th a t ex ce ed, ev e n m om en t ar i l y , r ate d v a l ue s (s uch as m a x i m um rati ngs , ope ra ti ng con di t i o n ra ng es , o r other parameters ) l i s ted i n pr odu cts s peci f i c a t i on s of a ny and all u t c p r od ucts d es c r i bed o r contai ne d her ei n. ut c p r od ucts a r e n ot de si gn ed f or us e i n l i f e s upp ort a p p l i ances , de v i ce s o r sy st em s w her e m a l f un cti o n o f thes e p r od ucts ca n b e rea son abl y ex pected to re su l t i n per so n a l i n j u r y . r epr od ucti o n i n w hol e o r i n par t is p r oh i b i t e d w i tho u t the p r i o r w r i tte n con sent o f the co pyr i ght ow n e r . t h e i n f o rm ati o n pre sen ted i n th i s do cum e n t d o e s no t f o r m pa rt of an y q uotati o n or con t ra ct, i s b e l i e v e d to b e a ccu rate and re l i a b l e a nd m a y be cha n g ed w i tho u t n o ti ce.
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